CSpace

浏览/检索结果: 共6条,第1-6条 帮助

已选(0)清除 条数/页:   排序方式:
Modeling and Optimization of Low-Power AND Gates Based on Stochastic Thermodynamics 期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2022, 卷号: 69, 期号: 9, 页码: 3729-3733
作者:  Kuang, Jiayue;  Ge, Xiaohu;  Yang, Yang;  Tian, Lin
收藏  |  浏览/下载:21/0  |  提交时间:2022/12/07
Logic gates  Transistors  Energy states  Thermodynamics  Voltage  Energy consumption  Integrated circuit modeling  Stochastic thermodynamics  subthreshold voltage  single-electron transistor  AND gate  order of operations  
Taming Process Variations in CNFET for Efficient Last-Level Cache Design 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2022, 卷号: 30, 期号: 4, 页码: 418-431
作者:  Xu, Dawen;  Feng, Zhuangyu;  Liu, Cheng;  Li, Li;  Wang, Ying;  Li, Huawei;  Li, Xiaowei
收藏  |  浏览/下载:25/0  |  提交时间:2022/12/07
CNTFETs  Delays  Transistors  Layout  Very large scale integration  Radio frequency  Energy consumption  nanotube field-effect transistor (CNFET)  last-level cache (LLC)  process variation (PV)  variation-aware cache  
Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP 期刊论文
SMALL, 2022, 页码: 9
作者:  Ding, Chuyun;  Yao, Yuyu;  Zhu, Leilei;  Shang, Honghui;  Xu, Peng;  Liu, Xiaolin;  Lin, Jia;  Wang, Feng;  Zhan, Xueying;  He, Jun;  Wang, Zhenxing
收藏  |  浏览/下载:18/0  |  提交时间:2022/12/07
2D layered materials  chemical vapor deposition  field-effect transistors (FETs)  Raman scattering  SnP nanosheets  
Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories 期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 12, 页码: 4660-4669
作者:  Wu, Bi;  Wang, Chao;  Wang, Zhaohao;  Wang, Ying;  Zhang, Deming;  Liu, Dijun;  Zhang, Youguang;  Hu, Xiaobo Sharon
收藏  |  浏览/下载:37/0  |  提交时间:2021/12/01
Random access memory  Magnetic tunneling  Switches  Reliability  Tunneling magnetoresistance  Metals  Transistors  SOT-MRAM  low power  high speed  high reliability  
A Novel High Performance and Energy Efficient NUCA Architecture for STT-MRAM LLCs With Thermal Consideration 期刊论文
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2020, 卷号: 39, 期号: 4, 页码: 803-815
作者:  Wu, Bi;  Dai, Pengcheng;  Cheng, Yuanqing;  Wang, Ying;  Yang, Jianlei;  Wang, Zhaohao;  Liu, Dijun;  Zhao, Weisheng
收藏  |  浏览/下载:52/0  |  提交时间:2020/12/10
System-on-chip  Computer architecture  Magnetic tunneling  Transistors  Switches  Thermal sensors  Organizations  Cache  data migration  low power  spin transfer torque magnetic memory (STT-MRAM)  thermal gradient  
The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures 期刊论文
IEEE DESIGN & TEST, 2020, 卷号: 37, 期号: 1, 页码: 79-99
作者:  Chen, Xiaoming;  Sun, Xiaoyu;  Wang, Panni;  Datta, Suman;  Hu, Xiaobo Sharon;  Yin, Xunzhao;  Jerry, Matthew;  Yu, Shimeng;  Laguna, Ann Franchesca;  Ni, Kai;  Niemier, Michael T.;  Reis, Dayane
收藏  |  浏览/下载:44/0  |  提交时间:2020/12/10
Iron  Transistors  Computer architecture  Switches  Capacitance  Logic gates  Computational modeling  Ferroelectric Field Effect Transistor  FeFET  Negative Capacitance Field Effect Transistor  NCFET  Preisach model  FPGAs  content addressable memories  CAM  TCAM  compute-in-memory  analog synapse