Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories

doi:10.1109/TCSI.2020.3020798

	Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories
	Wu, Bi 1,2; Wang, Chao 1; Wang, Zhaohao 3; Wang, Ying 4; Zhang, Deming 1; Liu, Dijun 5; Zhang, Youguang 1; Hu, Xiaobo Sharon 2
	2020-12-01
发表期刊	IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
ISSN	1549-8328
卷号	67 期号:12 页码:4660-4669
摘要	Continued scaling of Complementary Metal Oxide Semiconductor (CMOS) integrated circuit technology is slowing down due to physical limitations, while the static power of CMOS based memory is increasing as the transistors shrink. As an alternative memory technology, the Spin Transfer Torque Magnetic RAM (STT-MRAM) remains limited to low-level, high-capacity caches because of the high write power and still unsatisfactory write access speed. Spin Orbit Torque MRAM (SOT-MRAM), which has been proposed to tackle this issue, still faces some issues including the poor read margin due to low Tunnel Magnetoresistance (TMR) and undesirable use of a magnetic field for deterministic switching. This article proposes a novel 3T2SOT (three Transistors and two SOT magnetic tunnel junctions) based field-free MRAM, which can achieve higher read speed and reliability by adopting a self-referencing scheme, and lower write power benefiting from an advanced switching mechanism. Detailed circuit-level simulation results show that the write latency of the proposed design can be reduced to 0.3 ns, and the write power is two orders of magnitude lower than STT-MRAM. Additionally, compared to SRAM, for 8 MB cache memory, the read speed of 3T2SOT MRAM is enhanced by 38.9%. Compared to conventional 2T1SOT MRAM, the read performance is similar and the read error rate is dropped by 96.1% at least.
关键词	Random access memory Magnetic tunneling Switches Reliability Tunneling magnetoresistance Metals Transistors SOT-MRAM low power high speed high reliability
DOI	10.1109/TCSI.2020.3020798
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[61704005] ; Fundamental Research Funds for the Central Universities[YWF20-BJ-J-1042] ; Beijing Municipal Science and Technology Project[Z201100004220002]
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000596021000042
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
引用统计	被引频次：19[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://119.78.100.204/handle/2XEOYT63/16575
专题	中国科学院计算技术研究所期刊论文_英文
通讯作者	Wang, Zhaohao; Zhang, Youguang
作者单位	1.Beihang Univ, Fert Beijing Res Inst, Sch Elect & Informat Engn, Beijing 100191, Peoples R China 2.Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46656 USA 3.Beihang Univ, Beijing Adv Innovat Ctr Big Data & Brain Comp, Sch Microelect Fert Beijing Res Inst, Beijing 100191, Peoples R China 4.Chinese Acad Sci, Inst Comp Technol, Beijing 100190, Peoples R China 5.China Acad Informat & Commun Technol CAICT, Beijing 100191, Peoples R China
推荐引用方式 GB/T 7714	Wu, Bi,Wang, Chao,Wang, Zhaohao,et al. Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS,2020,67(12):4660-4669.
APA	Wu, Bi.,Wang, Chao.,Wang, Zhaohao.,Wang, Ying.,Zhang, Deming.,...&Hu, Xiaobo Sharon.(2020).Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS,67(12),4660-4669.
MLA	Wu, Bi,et al."Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 67.12(2020):4660-4669.