Modeling and Optimization of Low-Power AND Gates Based on Stochastic Thermodynamics

doi:10.1109/TCSII.2022.3178477

	Modeling and Optimization of Low-Power AND Gates Based on Stochastic Thermodynamics
	Kuang, Jiayue 1,2; Ge, Xiaohu 1,2; Yang, Yang 3,4; Tian, Lin 5,6,7
	2022-09-01
发表期刊	IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
ISSN	1549-7747
卷号	69 期号:9 页码:3729-3733
摘要	With the shortening of chip processes, the number of contained electrons and the supply voltage are decreased. When the energy level of contained electrons is close to the Landauer limit, the traditional analysis method based on empirical equations can no longer accurately analyze the nonequilibrium information processing of transistor logic gates. Based on stochastic thermodynamics theory, we propose an energy consumption model for a single-electron transistor AND gate which can be calculated by the input state transitions. Based on the proposed AND gate energy consumption model, an optimal input sequence operation method is proposed to reduce the energy consumption of three-input AND gate. Simulation results show that the energy consumption of three-input AND gate is reduced by up to 63.39% using the optimal operation method.
关键词	Logic gates Transistors Energy states Thermodynamics Voltage Energy consumption Integrated circuit modeling Stochastic thermodynamics subthreshold voltage single-electron transistor AND gate order of operations
DOI	10.1109/TCSII.2022.3178477
收录类别	SCI
语种	英语
资助项目	NSFC[62120106007]
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000848263100025
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://119.78.100.204/handle/2XEOYT63/19427
专题	中国科学院计算技术研究所期刊论文_英文
通讯作者	Ge, Xiaohu
作者单位	1.Huazhong Univ Sci & Technol, Sch Elect Informat & Commun, Wuhan 430074, Peoples R China 2.Huazhong Univ Sci & Technol, Int Joint Res Ctr Green Commun & Networking, Wuhan 430074, Peoples R China 3.Terminus Grp, CEO Off, Beijing 100027, Peoples R China 4.Peng Cheng Lab, Dept Broadband Commun, Shenzhen 518055, Peoples R China 5.Chinese Acad Sci, Beijing Key Lab Mobile Comp & Pervas Device, Beijing 100190, Peoples R China 6.Chinese Acad Sci, Inst Comp Technol, Beijing 100190, Peoples R China 7.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Kuang, Jiayue,Ge, Xiaohu,Yang, Yang,et al. Modeling and Optimization of Low-Power AND Gates Based on Stochastic Thermodynamics[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,2022,69(9):3729-3733.
APA	Kuang, Jiayue,Ge, Xiaohu,Yang, Yang,&Tian, Lin.(2022).Modeling and Optimization of Low-Power AND Gates Based on Stochastic Thermodynamics.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,69(9),3729-3733.
MLA	Kuang, Jiayue,et al."Modeling and Optimization of Low-Power AND Gates Based on Stochastic Thermodynamics".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS 69.9(2022):3729-3733.