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Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP
Ding, Chuyun1,2; Yao, Yuyu2,3; Zhu, Leilei4; Shang, Honghui5; Xu, Peng2; Liu, Xiaolin1; Lin, Jia1; Wang, Feng2; Zhan, Xueying2; He, Jun6; Wang, Zhenxing2,3
2022-03-11
发表期刊SMALL
ISSN1613-6810
页码9
摘要As an important metal phosphides material, 2D tin phosphides (SnPx 0 < x <= 3) have been theoretically predicted to have intriguing physicochemical properties and potential applications in electronics, optoelectronics, and energy fields. However, the synthesis of high-quality 2D SnP single crystal has not been reported due to the lack of efficiency and reliable growth method. Here, a facile atmospheric pressure chemical vapor deposition (APCVD) method is developed to realize the growth of high-quality 2D SnP nanosheets, by employing tin (Sn) foil as both liquid metal substrates and reaction precursor. Temperature-dependent and angle-resolved polarization Raman spectra observed Raman peaks located at 142.6, 303.3, and 444.2 cm(-1) are concluded to belong to A(1g) mode, which are consistent with the theoretical calculation results. Moreover, the field-effect transistor (FET) devices based on SnP nanosheets show a typical n-type characteristic with an on/off ratio of 10(3) at 200 K. SnP nanosheets also demonstrate excellent photoresponse performance under the illumination of 473, 532, and 639 nm lasers, which can be tuned by V-gs, V-ds, and light power density. It is believed that these findings can provide the first-hand experimental information for the future study of 2D SnP nanosheets.
关键词2D layered materials chemical vapor deposition field-effect transistors (FETs) Raman scattering SnP nanosheets
DOI10.1002/smll.202108017
收录类别SCI
语种英语
资助项目National Key R&D Program of China[2018YFA0703700] ; National Natural Science Foundation of China[91964203] ; National Natural Science Foundation of China[61974036] ; National Natural Science Foundation of China[61804035] ; National Natural Science Foundation of China[61804146] ; National Natural Science Foundation of China[12174246] ; National Natural Science Foundation of China[61875119] ; CAS Key Laboratory of Nanosystem and Hierarchical Fabrication ; Youth Innovation Promotion Association CAS
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:000767626200001
出版者WILEY-V C H VERLAG GMBH
引用统计
被引频次:6[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://119.78.100.204/handle/2XEOYT63/18953
专题中国科学院计算技术研究所期刊论文_英文
通讯作者Lin, Jia; Zhan, Xueying; Wang, Zhenxing
作者单位1.Shanghai Univ Elect Power, Dept Phys, Shanghai Key Lab Mat Protect & Adv Mat Elect Powe, Shanghai 200090, Peoples R China
2.Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
3.Univ Chinese Acad Sci, Sino Danish Coll, Beijing 100049, Peoples R China
4.Univ Sci & Technol China, Dept Chem Phys, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China
5.Chinese Acad Sci, Inst Comp Technol, State Key Lab Comp Architecture, Beijing 100190, Peoples R China
6.Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
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GB/T 7714
Ding, Chuyun,Yao, Yuyu,Zhu, Leilei,et al. Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP[J]. SMALL,2022:9.
APA Ding, Chuyun.,Yao, Yuyu.,Zhu, Leilei.,Shang, Honghui.,Xu, Peng.,...&Wang, Zhenxing.(2022).Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP.SMALL,9.
MLA Ding, Chuyun,et al."Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP".SMALL (2022):9.
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