The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures

doi:10.1109/MDAT.2019.2944094

	The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures
	Chen, Xiaoming 1; Sun, Xiaoyu 2; Wang, Panni 3; Datta, Suman 4; Hu, Xiaobo Sharon 4; Yin, Xunzhao 4; Jerry, Matthew 5; Yu, Shimeng 3; Laguna, Ann Franchesca 6; Ni, Kai 4; Niemier, Michael T.4; Reis, Dayane 6
	2020-02-01
发表期刊	IEEE DESIGN & TEST
ISSN	2168-2356
卷号	37 期号:1 页码:79-99
摘要	Editor's note: Semiconductor industry is steadily on the quest for emerging devices and device technologies that lead to higher performance and higher efficiency of computing over CMOS technology. This tutorial introduces the potential of emerging devices that integrate ferroelectric material into digital as well as analog circuits. With a focus on FeFET technology, the authors first present device characteristics, and advantages in comparison to CMOS but also other emerging technologies such as RRAM. The article comprehensively demonstrates the use of FeFET technology in circuits, architectures, and applications.- Jurgen Teich, FAU Erlangen
关键词	Iron Transistors Computer architecture Switches Capacitance Logic gates Computational modeling Ferroelectric Field Effect Transistor FeFET Negative Capacitance Field Effect Transistor NCFET Preisach model FPGAs content addressable memories CAM TCAM compute-in-memory analog synapse
DOI	10.1109/MDAT.2019.2944094
收录类别	SCI
语种	英语
资助项目	ASCENT - DARPA ; Innovative Project of the Institute of Computing Technology, Chinese Academy of Sciences (CAS)[5120186140] ; National Natural Science Foundation of China (NSFC)[61804155] ; Youth Innovation Promotion Association CAS ; Young Elite Scientists Sponsorship Program by CAST[2018QNRC001]
WOS研究方向	Computer Science ; Engineering
WOS类目	Computer Science, Hardware & Architecture ; Engineering, Electrical & Electronic
WOS记录号	WOS:000515556300009
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://119.78.100.204/handle/2XEOYT63/14607
专题	中国科学院计算技术研究所期刊论文_英文
通讯作者	Niemier, Michael T.
作者单位	1.Chinese Acad Sci, Inst Comp Technol, Beijing, Peoples R China 2.Georgia Inst Technol, Elect Engn, Atlanta, GA 30332 USA 3.Georgia Inst Technol, Elect & Comp Engn, Atlanta, GA 30332 USA 4.Univ Notre Dame, Notre Dame, IN 46556 USA 5.Micron, Boise, ID USA 6.Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46556 USA
推荐引用方式 GB/T 7714	Chen, Xiaoming,Sun, Xiaoyu,Wang, Panni,et al. The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures[J]. IEEE DESIGN & TEST,2020,37(1):79-99.
APA	Chen, Xiaoming.,Sun, Xiaoyu.,Wang, Panni.,Datta, Suman.,Hu, Xiaobo Sharon.,...&Reis, Dayane.(2020).The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures.IEEE DESIGN & TEST,37(1),79-99.
MLA	Chen, Xiaoming,et al."The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures".IEEE DESIGN & TEST 37.1(2020):79-99.