中国科学院计算技术研究所机构知识库

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	A NAND-SPIN-Based Magnetic ADC 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2021, 卷号: 68, 期号: 2, 页码: 617-621 作者:  Wu, Bi;  Wang, Zhaohao;  Li, Yuxuan;  Wang, Ying;  Liu, Dijun;  Zhao, Weisheng;  Hu, Xiaobo Sharon 收藏  |  浏览/下载：36/0  |  提交时间：2021/12/01 Switches  Resistance  Reliability  Magnetic tunneling  Tunneling magnetoresistance  Sensors  Magnetic devices  Magnetic ADC  NAND-SPIN  multiple switching thresholds
	Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 12, 页码: 4660-4669 作者:  Wu, Bi;  Wang, Chao;  Wang, Zhaohao;  Wang, Ying;  Zhang, Deming;  Liu, Dijun;  Zhang, Youguang;  Hu, Xiaobo Sharon 收藏  |  浏览/下载：37/0  |  提交时间：2021/12/01 Random access memory  Magnetic tunneling  Switches  Reliability  Tunneling magnetoresistance  Metals  Transistors  SOT-MRAM  low power  high speed  high reliability
	A Novel High Performance and Energy Efficient NUCA Architecture for STT-MRAM LLCs With Thermal Consideration 期刊论文 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2020, 卷号: 39, 期号: 4, 页码: 803-815 作者:  Wu, Bi;  Dai, Pengcheng;  Cheng, Yuanqing;  Wang, Ying;  Yang, Jianlei;  Wang, Zhaohao;  Liu, Dijun;  Zhao, Weisheng 收藏  |  浏览/下载：52/0  |  提交时间：2020/12/10 System-on-chip  Computer architecture  Magnetic tunneling  Transistors  Switches  Thermal sensors  Organizations  Cache  data migration  low power  spin transfer torque magnetic memory (STT-MRAM)  thermal gradient
	Bulkyflip: A NAND-SPIN-Based Last-Level Cache With Bandwidth-Oriented Write Management Policy 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 1, 页码: 108-120 作者:  Wu, Bi;  Dai, Pengcheng;  Wang, Zhaohao;  Wang, Chao;  Wang, Ying;  Yang, Jianlei;  Cheng, Yuanqing;  Liu, Dijun;  Zhang, Youguang;  Zhao, Weisheng;  Hu, Xiaobo Sharon 收藏  |  浏览/下载：49/0  |  提交时间：2020/12/10 NAND-SPIN  spin orbit torque (SOT) MRAM  last level cache  write throughput  high performance
	An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design 期刊论文 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 8, 页码: 1851-1860 作者:  Wu, Bi;  Zhang, Beibei;  Cheng, Yuanqing;  Wang, Ying;  Liu, Dijun;  Zhao, Weisheng 收藏  |  浏览/下载：77/0  |  提交时间：2019/12/10 Error correction code (ECC)  last level cache (LLC)  reliability  spin-transfer-torque magnetoresistive random-access memory (STT-MRAM)  temperature