Bulkyflip: A NAND-SPIN-Based Last-Level Cache With Bandwidth-Oriented Write Management Policy

doi:10.1109/TCSI.2019.2947242

	Bulkyflip: A NAND-SPIN-Based Last-Level Cache With Bandwidth-Oriented Write Management Policy
	Wu, Bi 1,2; Dai, Pengcheng 1,2; Wang, Zhaohao 1; Wang, Chao 1,2; Wang, Ying 3; Yang, Jianlei 4; Cheng, Yuanqing 1; Liu, Dijun 5; Zhang, Youguang 6; Zhao, Weisheng 1; Hu, Xiaobo Sharon 7
	2020
发表期刊	IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
ISSN	1549-8328
卷号	67 期号:1 页码:108-120
摘要	High capacity last-level caches (LLCs) are being used to help alleviate the growing speed gap between the processor and main memory. However, traditional CMOS based memory technologies (SRAM, DRAM, et al.) for such LLCs consume high static power. Non-volatile memory such as STT-MRAM has been proposed as a low power solution for LLCs. Nevertheless, the high write current induces a so-called "supply current threshold" issue and limits the maximum number of bit-cells that can be written concurrently in one cycle in an STT-MRAM cache. This drawback significantly decreases the bandwidth of the STT-MRAM cache compared with SRAM. In this work, we present a hardware implementation of NAND-like spintronic memory (NAND-SPIN) LLC for the first time. By exploiting the unique erase-then-program operation for writing NAND-SPIN, we propose an adaptive buffer entry (ABE) write policy for each cache write access. Instead of writing a fixed number of bits sequentially, our method adaptively extends the write data length under a fixed maximum cache supply current. Compared to existing STT-MRAM caches, 'ABE' can achieve 70 performance improvements on average. Compared with the conventional early write terminate (EWT) policy, 'ABE' can save 33 write energy on average with negligible hardware overhead.
关键词	NAND-SPIN spin orbit torque (SOT) MRAM last level cache write throughput high performance
DOI	10.1109/TCSI.2019.2947242
收录类别	SCI
语种	英语
资助项目	Asian Research Grant by the University of Notre Dame
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000508385000010
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://119.78.100.204/handle/2XEOYT63/15009
专题	中国科学院计算技术研究所期刊论文_英文
通讯作者	Wang, Zhaohao; Wang, Ying; Zhao, Weisheng
作者单位	1.Beihang Univ, Beijing Adv Innovat Ctr Big Data & Brain Comp, Sch Microelect, Fert Beijing Res Inst, Beijing 100191, Peoples R China 2.Beihang Univ, Sch Elect & Informat Engn, Beijing 100191, Peoples R China 3.Chinese Acad Sci, Inst Comp Technol, Beijing 100190, Peoples R China 4.Beihang Univ, Beijing Adv Innovat Ctr Big Data & Brain Comp, Fert Beijing Res Inst, Sch Comp Sci & Engn, Beijing 100191, Peoples R China 5.CAICT, Beijing 100191, Peoples R China 6.Beihang Univ, Sch Elect & Informat Engn, Fert Beijing Res Inst, Beijing 100191, Peoples R China 7.Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46656 USA
推荐引用方式 GB/T 7714	Wu, Bi,Dai, Pengcheng,Wang, Zhaohao,et al. Bulkyflip: A NAND-SPIN-Based Last-Level Cache With Bandwidth-Oriented Write Management Policy[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS,2020,67(1):108-120.
APA	Wu, Bi.,Dai, Pengcheng.,Wang, Zhaohao.,Wang, Chao.,Wang, Ying.,...&Hu, Xiaobo Sharon.(2020).Bulkyflip: A NAND-SPIN-Based Last-Level Cache With Bandwidth-Oriented Write Management Policy.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS,67(1),108-120.
MLA	Wu, Bi,et al."Bulkyflip: A NAND-SPIN-Based Last-Level Cache With Bandwidth-Oriented Write Management Policy".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 67.1(2020):108-120.