An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design

doi:10.1109/TVLSI.2019.2913207

	An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design
	Wu, Bi 1,2; Zhang, Beibei 3; Cheng, Yuanqing 3; Wang, Ying 4; Liu, Dijun 5; Zhao, Weisheng 1,2
	2019-08-01
发表期刊	IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
ISSN	1063-8210
卷号	27 期号:8 页码:1851-1860
摘要	Considering the insatiable demand for high-performance computing, on-chip cache capacity increases rapidly. Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) is a promising cache candidate due to ultralow standby power, high-access speed, and integration density. Unfortunately, when the feature size of magnetic tunnel junction (MTJ) scales down to 1 Xnm, read current approaches write current closely, which may result in read disturbance threatening the reliability of STT-MRAM. Furthermore, the elevating on-chip temperature reduces the thermal stability of STTM-RAM remarkably and aggravates the read disturbance. Error correction code (ECC) is an effective technique to enhance memory reliability. In this paper, we take advantage of the thermal dependence of STT-MRAM and propose a thermally adaptive ECC design, called "Chameleon," that can adjust the ECC protection strength dynamically to reduce the ECC storage overhead and improve the cache access performance and energy efficiency. Experimental results show that compared to the conservative nonadaptive ECC scheme, our design can improve both cache performance and energy consumption effectively.
关键词	Error correction code (ECC) last level cache (LLC) reliability spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) temperature
DOI	10.1109/TVLSI.2019.2913207
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[61401008] ; National Natural Science Foundation of China[61704005] ; National Natural Science Foundation of China[61571023] ; Beijing Natural Science Foundation[4192035] ; Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20180307123657364] ; International Collaboration[B16001] ; National Key Technology Program of China[2017ZX01032101] ; State Key Laboratory of Computer Architecture, Institute of Computing Technology, Chinese Academy of Sciences[CARCH201602]
WOS研究方向	Computer Science ; Engineering
WOS类目	Computer Science, Hardware & Architecture ; Engineering, Electrical & Electronic
WOS记录号	WOS:000477733400013
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://119.78.100.204/handle/2XEOYT63/4472
专题	中国科学院计算技术研究所期刊论文_英文
通讯作者	Zhao, Weisheng
作者单位	1.BDBC, Fert Beijing Inst, Beijing 100191, Peoples R China 2.Beihang Univ, Sch Microeletron, Beijing 100191, Peoples R China 3.Beihang Univ, Sch Microelect, Beijing 100191, Peoples R China 4.Chinese Acad Sci, Inst Comp Technol, Beijing 100190, Peoples R China 5.CAICT, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Wu, Bi,Zhang, Beibei,Cheng, Yuanqing,et al. An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design[J]. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS,2019,27(8):1851-1860.
APA	Wu, Bi,Zhang, Beibei,Cheng, Yuanqing,Wang, Ying,Liu, Dijun,&Zhao, Weisheng.(2019).An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design.IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS,27(8),1851-1860.
MLA	Wu, Bi,et al."An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design".IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS 27.8(2019):1851-1860.