A NAND-SPIN-Based Magnetic ADC

doi:10.1109/TCSII.2020.3013659

	A NAND-SPIN-Based Magnetic ADC
	Wu, Bi 1; Wang, Zhaohao 2; Li, Yuxuan 2; Wang, Ying 3; Liu, Dijun 4; Zhao, Weisheng 2; Hu, Xiaobo Sharon 5
	2021-02-01
发表期刊	IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
ISSN	1549-7747
卷号	68 期号:2 页码:617-621
摘要	This brief introduces a 3-bit magnetic analog-to-digital converter (MADC) employing the NAND-SPIN based multi-bit device which has the same structure as the NAND-SPIN memory cell. By adjusting the physical shape of the heavy metal (HM) line, the all-in-one integrated NAND-SPIN device exhibits multiple switching thresholds which could quantify the input current into several states and store them into the corresponding Magnetic Tunnel Junctions (MTJs). In order to read data reliably, a read port is connected to each Spin Orbit Torque (SOT) MTJs so as to minimize Tunnel Magnetoresistance (TMR) degradation due to non-uniform heavy metal resistance. In addition, an HM size adjustment methodology is proposed to improve the conversion accuracy and switching reliability. Detailed micromagnetic simulation results show that the proposed MADC could achieve 5 GHz sampling rate with only 0.068 pJ conversion energy, and in-memory conversion for higher bit resolution while provides the benefit of nonvolatility.
关键词	Switches Resistance Reliability Magnetic tunneling Tunneling magnetoresistance Sensors Magnetic devices Magnetic ADC NAND-SPIN multiple switching thresholds
DOI	10.1109/TCSII.2020.3013659
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[61704005] ; Fundamental Research Funds for the Central Universities[YWF20-BJ-J-1042] ; Beijing Municipal Science and Technology Project[Z201100004220002]
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000613561600015
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://119.78.100.204/handle/2XEOYT63/16273
专题	中国科学院计算技术研究所期刊论文_英文
通讯作者	Wang, Zhaohao; Zhao, Weisheng
作者单位	1.Beihang Univ, Sch Microelect, Sch Elect & Informat Engn, Fert Beijing Res Inst, Beijing 100191, Peoples R China 2.Beihang Univ, Beijing Adv Innovat Ctr Big Data & Brain Comp, Sch Microelect, Fert Beijing Res Inst, Beijing 100191, Peoples R China 3.Chinese Acad Sci, Inst Comp Technol, Beijing 100190, Peoples R China 4.China Acad Informat & Commun Technol, Beijing 100191, Peoples R China 5.Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46656 USA
推荐引用方式 GB/T 7714	Wu, Bi,Wang, Zhaohao,Li, Yuxuan,et al. A NAND-SPIN-Based Magnetic ADC[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,2021,68(2):617-621.
APA	Wu, Bi.,Wang, Zhaohao.,Li, Yuxuan.,Wang, Ying.,Liu, Dijun.,...&Hu, Xiaobo Sharon.(2021).A NAND-SPIN-Based Magnetic ADC.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,68(2),617-621.
MLA	Wu, Bi,et al."A NAND-SPIN-Based Magnetic ADC".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS 68.2(2021):617-621.