中国科学院计算技术研究所机构知识库

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限定条件	出处：IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择期刊影响因子升序期刊影响因子降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序WOS被引频次升序WOS被引频次降序题名升序题名降序
	In-Memory Wallace Tree Multipliers Based on Majority Gates Within Voltage-Gated SOT-MRAM Crossbar Arrays 期刊论文 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2024, 页码: 8 作者:  Hui, Yajuan;  Li, Qingzhen;  Wang, Leimin;  Liu, Cheng;  Zhang, Deming;  Miao, Xiangshui 收藏  |  浏览/下载：4/0  |  提交时间：2024/05/20 In-memory computing  majority gates  voltage-gated SOT-MRAM  Wallace tree multiplier
	An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design 期刊论文 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 8, 页码: 1851-1860 作者:  Wu, Bi;  Zhang, Beibei;  Cheng, Yuanqing;  Wang, Ying;  Liu, Dijun;  Zhao, Weisheng 收藏  |  浏览/下载：77/0  |  提交时间：2019/12/10 Error correction code (ECC)  last level cache (LLC)  reliability  spin-transfer-torque magnetoresistive random-access memory (STT-MRAM)  temperature
	Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits 期刊论文 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172 作者:  Yin, Xunzhao;  Chen, Xiaoming;  Niemier, Michael;  Hu, Xiaobo Sharon 收藏  |  浏览/下载：81/0  |  提交时间：2019/04/03 Ferroelectric FET (FeFET)  logic-in-memory (LiM)  nonvolatile (NV) memory
	PSI Conscious Write Scheduling: Architectural Support for Reliable Power Delivery in 3-D Die-Stacked PCM 期刊论文 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2016, 卷号: 24, 期号: 5, 页码: 1613-1625 作者:  Wang, Ying;  Han, Yinhe;  Li, Huawei;  Zhang, Lei;  Cheng, Yuanqing;  Li, Xiaowei 收藏  |  浏览/下载：53/0  |  提交时间：2019/12/13 3-D integration  IR-drop  phase-change memory (PCM)  through-silicon-via (TSV)  write throughput
	Enhanced Wear-Rate Leveling for PRAM Lifetime Improvement Considering Process Variation 期刊论文 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2016, 卷号: 24, 期号: 1, 页码: 92-102 作者:  Han, Yinhe;  Dong, Jianbo;  Weng, Kaiheng;  Wang, Ying;  Li, Xiaowei 收藏  |  浏览/下载：42/0  |  提交时间：2019/12/13 Endurance  phase-change random access memory (PRAM)  wear leveling (WL)