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Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172
作者:  Yin, Xunzhao;  Chen, Xiaoming;  Niemier, Michael;  Hu, Xiaobo Sharon
收藏  |  浏览/下载:82/0  |  提交时间:2019/04/03
Ferroelectric FET (FeFET)  logic-in-memory (LiM)  nonvolatile (NV) memory  
PSI Conscious Write Scheduling: Architectural Support for Reliable Power Delivery in 3-D Die-Stacked PCM 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2016, 卷号: 24, 期号: 5, 页码: 1613-1625
作者:  Wang, Ying;  Han, Yinhe;  Li, Huawei;  Zhang, Lei;  Cheng, Yuanqing;  Li, Xiaowei
收藏  |  浏览/下载:53/0  |  提交时间:2019/12/13
3-D integration  IR-drop  phase-change memory (PCM)  through-silicon-via (TSV)  write throughput  
X-Filling for Simultaneous Shift- and Capture-Power Reduction in At-Speed Scan-Based Testing 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2010, 卷号: 18, 期号: 7, 页码: 1081-1092
作者:  Li, Jia;  Xu, Qiang;  Hu, Yu;  Li, Xiaowei
收藏  |  浏览/下载:38/0  |  提交时间:2019/12/16
At-speed scan-based testing  low-power testing  X-filling