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A Machine Learning Approach for Optimization of Channel Geometry and Source/Drain Doping Profile of Stacked Nanosheet Transistors 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 页码: 7
作者:  Xu, Haoqing;  Gan, Weizhuo;  Cao, Lei;  Yang, Cheng;  Wu, Jiahao;  Zhou, Mi;  Qu, Hengze;  Zhang, Shengli;  Yin, Huaxiang;  Wu, Zhenhua
收藏  |  浏览/下载：35/0  |  提交时间：2022/12/07
Performance evaluation  Doping  Optimization  Geometry  Semiconductor process modeling  Training  Logic gates  Machine learning  multi-objective optimization (MOO)  nanosheet  technology computer-aided design (TCAD) simulation