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I-DDT testing versus I-DDQ testing
Min, YH; Li, ZC
1998-08-01
发表期刊JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS
ISSN0923-8174
卷号13期号:1页码:51-55
摘要I-DDQ testing has progressed to become a worldwide accepted test method to detect CMOS IC defects. However, it is noticed that observing the average transient current can lead to improvements in real defect coverage, which is referred to I-DDT testing. This letter presents a formal procedure to identify I-DDT testable faults, and to generate input vector pairs to detect the faults based on Boolean process. It is interesting to note that those faults may not be detected by I-DDQ or other test methods, which shows the significance of I-DDT testing.
关键词I-DDQ test Boolean process stuck-open fault I-DDT test
收录类别SCI
语种英语
WOS研究方向Engineering
WOS类目Engineering, Electrical & Electronic
WOS记录号WOS:000077635800006
出版者KLUWER ACADEMIC PUBL
引用统计
被引频次:12[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://119.78.100.204/handle/2XEOYT63/13277
专题中国科学院计算技术研究所期刊论文_英文
通讯作者Min, YH
作者单位Chinese Acad Sci, Comp Technol Inst, CAD Lab, Ctr Fault Tolerant Comp, Beijing 100080, Peoples R China
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GB/T 7714
Min, YH,Li, ZC. I-DDT testing versus I-DDQ testing[J]. JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS,1998,13(1):51-55.
APA Min, YH,&Li, ZC.(1998).I-DDT testing versus I-DDQ testing.JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS,13(1),51-55.
MLA Min, YH,et al."I-DDT testing versus I-DDQ testing".JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS 13.1(1998):51-55.
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