Statistical lifetime reliability optimization considering joint effect of process variation and aging

doi:10.1016/j.vlsi.2011.03.004

	Statistical lifetime reliability optimization considering joint effect of process variation and aging
	Jin, Song 1,2; Han, Yinhe 1,2; Li, Huawei 1,2; Li, Xiaowei 1,2
	2011-06-01
发表期刊	INTEGRATION-THE VLSI JOURNAL
ISSN	0167-9260
卷号	44 期号:3 页码:185-191
摘要	Aging effect degrades circuit performance in the runtime, interacts with fabrication-induced device parameter variation, and thus posing significant impact on circuit lifetime reliability. In this work, a statistical circuit optimization flow is proposed to ensure lifetime reliability of the manufactured chip in the presence of process variation and aging effects. It exploits a variation-aware gate-level statistical aging degradation model to characterize circuit lifetime reliability, identifies a set of worst duty cycles on the inputs of statistically critical gates to estimate the worst delay degradations on these gates. Based on the delay degradation information, statistical gate sizing is performed which enables the manufactured chip to satisfy lifetime reliability constraint in term of low area overhead. (C) 2011 Elsevier B.V. All rights reserved.
关键词	Lifetime reliability Process variation NBTI Duty cycle Gate sizing
DOI	10.1016/j.vlsi.2011.03.004
收录类别	SCI
语种	英语
资助项目	National Basic Research Program of China (973)[2011CB302503] ; National Natural Science Foundation of China (NSFC)[60806014] ; National Natural Science Foundation of China (NSFC)[61076037] ; National Natural Science Foundation of China (NSFC)[60906018] ; National Natural Science Foundation of China (NSFC)[60921002] ; National Natural Science Foundation of China (NSFC)[60831160526]
WOS研究方向	Computer Science ; Engineering
WOS类目	Computer Science, Hardware & Architecture ; Engineering, Electrical & Electronic
WOS记录号	WOS:000292011900004
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：12[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://119.78.100.204/handle/2XEOYT63/12691
专题	中国科学院计算技术研究所期刊论文_英文
通讯作者	Li, Huawei
作者单位	1.Chinese Acad Sci, Key Lab Comp Syst & Architecture, Inst Comp Technol, Beijing, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing, Peoples R China
推荐引用方式 GB/T 7714	Jin, Song,Han, Yinhe,Li, Huawei,et al. Statistical lifetime reliability optimization considering joint effect of process variation and aging[J]. INTEGRATION-THE VLSI JOURNAL,2011,44(3):185-191.
APA	Jin, Song,Han, Yinhe,Li, Huawei,&Li, Xiaowei.(2011).Statistical lifetime reliability optimization considering joint effect of process variation and aging.INTEGRATION-THE VLSI JOURNAL,44(3),185-191.
MLA	Jin, Song,et al."Statistical lifetime reliability optimization considering joint effect of process variation and aging".INTEGRATION-THE VLSI JOURNAL 44.3(2011):185-191.