SENTRY: Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory

doi:10.1007/s11390-024-4251-9

CSpace

	SENTRY: Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory
	Guo, Zi-Long 1; Chang, Liang 1; Liu, Jian-Wei 1; Tan, Hai-Ning 2; Zhou, Jing 1; Wu, Qiang 3
	2025-11-01
发表期刊	JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY
ISSN	1000-9000
卷号	40 期号:6 页码:1530-1545
摘要	Emerging non-volatile memories (NVMs), including resistive random-access memory (RRAM) and magnetic random-access memory (MRAM), have been promising solutions for intelligent embedded systems. With the non-volatility and low leakage power consumption, the industry-based embedded NVMs can be used to develop energy-efficient artificial intelligent processors. However, industry-based NVMs typically have low endurance with only 104 to 106 maximum write times, shortening the lifetime of embedded systems. In addition, non-uniform write distribution to physical addresses onto NVMs may further reduce system lifetime. Furthermore, several intentional attacks, such as malicious writing, may impair embedded NVMs. In this paper, we present a novel wear-leveling technique based on row-column data movement, SENTRY, to extend system lifetime. We explore industry-based embedded NVM chips and analyze practical data distributions of several tasks. We design a coordinate system based moving method with negligible storage overhead for more efficient data movement. The experiment shows that SENTRY achieves a 96.07% life utilization rate with 1.47% data movement overhead. In addition, SENTRY increases the endurance margin of memory by 6 048x compared with an unprotected baseline (without SENTRY) under malicious address attacks.
关键词	embedded nonvolatile memory endurance wear-leveling resistive random access memory magnetic random access memory
DOI	10.1007/s11390-024-4251-9
收录类别	SCI
语种	英语
WOS研究方向	Computer Science
WOS类目	Computer Science, Hardware & Architecture ; Computer Science, Software Engineering
WOS记录号	WOS:001663947600011
出版者	SPRINGER SINGAPORE PTE LTD
引用统计
文献类型	期刊论文
条目标识符	http://119.78.100.204/handle/2XEOYT63/42878
专题	中国科学院计算技术研究所
通讯作者	Chang, Liang; Tan, Hai-Ning
作者单位	1.Univ Elect Sci & Technol China, Sch Informat & Commun Engn, Chengdu 611731, Peoples R China 2.Chinese Acad Sci, Inst Comp Technol, Beijing 100190, Peoples R China 3.Nanjing Houmo Technol Co Ltd, Nanjing 210038, Peoples R China
推荐引用方式 GB/T 7714	Guo, Zi-Long,Chang, Liang,Liu, Jian-Wei,et al. SENTRY: Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory[J]. JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY,2025,40(6):1530-1545.
APA	Guo, Zi-Long,Chang, Liang,Liu, Jian-Wei,Tan, Hai-Ning,Zhou, Jing,&Wu, Qiang.(2025).SENTRY: Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory.JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY,40(6),1530-1545.
MLA	Guo, Zi-Long,et al."SENTRY: Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory".JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY 40.6(2025):1530-1545.