A 16-Gb/s 3-tap adaptive DFE in 12-nm FinFET CMOS technology

doi:10.1016/j.mejo.2024.106233

	A 16-Gb/s 3-tap adaptive DFE in 12-nm FinFET CMOS technology
	Sun, Xinzhuo 1; Ding, Jianping 2; Yang, Liqiong 3; Lin, Changlong 4; Li, Yao 1; Zhao, Yiqiang 1
	2024-07-01
发表期刊	MICROELECTRONICS JOURNAL
ISSN	0026-2692
卷号	149 页码:10
摘要	This paper introduces a 3-tap half-rate adaptive decision feedback equalizer (DFE) and a 2-D eye-opening monitor (EOM). A newly developed regenerating sampler (RG-sampler) with smaller setup time and ck2q time is integrated into the proposed DFE, enhancing its performance. To ensure greater robustness, the sign-sign least-mean-squares (SSLMS) algorithm with a pattern filter is employed to adapt DFE tap coefficients. The proposed 2-D EOM accurately captures the shape of the eye diagram using adjustment steps of 1.95ps and 7 mV in the horizontal and vertical directions, respectively. Additionally, by reusing analog components within the adaptive DFE and 2-D EOM modules, significant reductions in silicon area and power consumption are achieved. Implemented in 12-nm FinFET CMOS technology, the transceiver integrated with adaptive DFE and 2-D EOM operates at a data rate of 16 Gb/s over a channel with 30 dB loss at 8 GHz frequency. The proposed adaptive DFE and 2-D EOM occupy a total area of 0.00808 mm2. Measurement results demonstrate that following DFE adaptation, the eye height is 77 mV, and the eye width is 29.25ps at 16 Gb/s.
关键词	Decision feedback equalizers (DFEs) Adaptive equalization Regenerating sampler (RG-Sampler) Sign-sign least-mean-squares (SSLMS) 2-D eye-opening monitor (EOM) Receiver
DOI	10.1016/j.mejo.2024.106233
收录类别	SCI
语种	英语
WOS研究方向	Engineering ; Science & Technology - Other Topics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology
WOS记录号	WOS:001238918500001
出版者	ELSEVIER SCI LTD
引用统计
文献类型	期刊论文
条目标识符	http://119.78.100.204/handle/2XEOYT63/40025
专题	中国科学院计算技术研究所期刊论文_英文
通讯作者	Li, Yao
作者单位	1.Tianjin Univ, Sch Microelect, Tianjin, Peoples R China 2.Univ Sci & Technol China, Hefei, Peoples R China 3.Chinese Acad Sci, Inst Comp Technol, State Key Lab Processors, Beijing, Peoples R China 4.Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin, Peoples R China
推荐引用方式 GB/T 7714	Sun, Xinzhuo,Ding, Jianping,Yang, Liqiong,et al. A 16-Gb/s 3-tap adaptive DFE in 12-nm FinFET CMOS technology[J]. MICROELECTRONICS JOURNAL,2024,149:10.
APA	Sun, Xinzhuo,Ding, Jianping,Yang, Liqiong,Lin, Changlong,Li, Yao,&Zhao, Yiqiang.(2024).A 16-Gb/s 3-tap adaptive DFE in 12-nm FinFET CMOS technology.MICROELECTRONICS JOURNAL,149,10.
MLA	Sun, Xinzhuo,et al."A 16-Gb/s 3-tap adaptive DFE in 12-nm FinFET CMOS technology".MICROELECTRONICS JOURNAL 149(2024):10.