Quantum Transport Simulations of a Proposed Logic-In-Memory Device Based on a Bipolar Magnetic Semiconductor

doi:10.1103/PhysRevApplied.20.014050

	Quantum Transport Simulations of a Proposed Logic-In-Memory Device Based on a Bipolar Magnetic Semiconductor
	Ke, Yunzhe 1; Li, Wei 2; Yin, Guoxue 1; Zhang, Lingxue 1; Quhe, Ruge 1
	2023-07-24
发表期刊	PHYSICAL REVIEW APPLIED
ISSN	2331-7019
卷号	20 期号:1 页码:12
摘要	To overcome the memory wall based on the von Neumann architecture, in-memory computing has been intensively studied as a potential solution. Recently, an alternative type of spintronic material, namely, bipolar magnetic semiconductors (BMSs), has attracted much attention because of its opposite spinpolarized valence and conduction bands, which have thus facilitated electrically tunable spin transport. Here, we propose a logic-in-memory device with a traditional field-effect-transistor (FET) configuration by making use of the ferromagnetic and semiconducting features of BMSs simultaneously. Two representative BMSs (2H-VS2 and semihydrogenated graphene) are selected as the FET channels, and the transport properties of these devices are investigated by using ab initio quantum transport simulations. The spin polarization of the current reaches up to 98%, enabling the device to provide an ideal spinpolarization signal. The distinct electronic structures under the two magnetic states and the electrically tunable spin polarization allow the devices to perform logic operations directly in situ. Two-input logic, including XOR and nonvolatile AND or NOR, can be realized with one and two BMS FETs, respectively, efficiently decreasing the integration density of logic circuits. This work provides an alternative route to realize fused storage and computing functions in a transistor.
DOI	10.1103/PhysRevApplied.20.014050
收录类别	SCI
语种	英语
资助项目	National Key Ramp;D Program of China[2021ZD01 10102]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001052071300002
出版者	AMER PHYSICAL SOC
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://119.78.100.204/handle/2XEOYT63/21356
专题	中国科学院计算技术研究所期刊论文_英文
通讯作者	Li, Wei
作者单位	1.Beijing Univ Posts & Telecommun, Sch Sci, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China 2.Chinese Acad Sci, Inst Comp Technol, SKL Processors, Beijing, Peoples R China
推荐引用方式 GB/T 7714	Ke, Yunzhe,Li, Wei,Yin, Guoxue,et al. Quantum Transport Simulations of a Proposed Logic-In-Memory Device Based on a Bipolar Magnetic Semiconductor[J]. PHYSICAL REVIEW APPLIED,2023,20(1):12.
APA	Ke, Yunzhe,Li, Wei,Yin, Guoxue,Zhang, Lingxue,&Quhe, Ruge.(2023).Quantum Transport Simulations of a Proposed Logic-In-Memory Device Based on a Bipolar Magnetic Semiconductor.PHYSICAL REVIEW APPLIED,20(1),12.
MLA	Ke, Yunzhe,et al."Quantum Transport Simulations of a Proposed Logic-In-Memory Device Based on a Bipolar Magnetic Semiconductor".PHYSICAL REVIEW APPLIED 20.1(2023):12.