Institute of Computing Technology, Chinese Academy IR
Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization | |
Ni, Jiacheng1; Liu, Keren1; Wu, Bi1; Zhao, Weisheng1; Cheng, Yuanqing1; Zhang, Xiaolong2; Wang, Ying3 | |
2020-07-01 | |
发表期刊 | ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS |
ISSN | 1550-4832 |
卷号 | 16期号:3页码:18 |
摘要 | Traditional memory technologies face severe challenges in meeting the ever-increasing power and memory bandwidth requirements for high-performance computing and big-data analyses. Several emerging memory technologies are promising as the replacements of SRAM or DRAM. Among them, STT-MRAM can be used to replace SRAM as the last-level cache (LLC). However, it suffers from high write energy and latency. In this article, we investigate data patterns written from SRAM-based upper-level cache to STT-MRAM-based LLC to explore the write energy reduction potential. Depending on the data layoutwithin a cache line, redundant bits can be identified and eliminated from write back operations to save STT-MRAM write energy. We also propose a dynamic profiling method to accommodate different application characteristics. The extensive simulation results show that write energy can be saved by 37.05% similar to 38.89% for static profiling and 19.76% similar to 34.29% for dynamic profiling. |
关键词 | STT-MRAM write energy reductions data patterns cache hierarchy |
DOI | 10.1145/3381860 |
收录类别 | SCI |
语种 | 英语 |
资助项目 | Beijing Natural Science Foundation[4192035] ; Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20180307123657364] |
WOS研究方向 | Computer Science ; Engineering ; Science & Technology - Other Topics |
WOS类目 | Computer Science, Hardware & Architecture ; Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology |
WOS记录号 | WOS:000582598100006 |
出版者 | ASSOC COMPUTING MACHINERY |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.204/handle/2XEOYT63/15493 |
专题 | 中国科学院计算技术研究所期刊论文_英文 |
通讯作者 | Cheng, Yuanqing |
作者单位 | 1.Beihang Univ, 37 Xueyuan Rd, Beijing 100191, Peoples R China 2.Beijing ByteDance Technol Co Ltd, 48 Zhichun Rd, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Comp Technol, 6 Kexueyuan South Rd, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 | Ni, Jiacheng,Liu, Keren,Wu, Bi,et al. Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization[J]. ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS,2020,16(3):18. |
APA | Ni, Jiacheng.,Liu, Keren.,Wu, Bi.,Zhao, Weisheng.,Cheng, Yuanqing.,...&Wang, Ying.(2020).Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization.ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS,16(3),18. |
MLA | Ni, Jiacheng,et al."Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization".ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS 16.3(2020):18. |
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